NDD02N40-1G

onsemi

NDD02N40-1G

Analog & Power

MOSFET N-CH 400V 1.7A IPAK

ObsoleteTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.5Ohm @ 220mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds121 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Max Power Dissipation39W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-Pak

Environmental

Operating Temperature-55°C ~ 150°C (TJ)