NDB6030PL

onsemi

NDB6030PL

Analog & Power

MOSFET P-CH 30V 30A D2PAK

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 19A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Max Power Dissipation75W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)

Environmental

Operating Temperature-65°C ~ 175°C (TJ)