NCV5707BDR2G

onsemi

NCV5707BDR2G

Datasheet

Analog & Power

ISOLATED HIGH CURRENT GATE DRIVE

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Channel TypeSingle
Driven ConfigurationHigh-Side and Low-Side
Gate TypeIGBT, N-Channel MOSFET
Input TypeInverting
Manufactureronsemi
Mounting TypeSurface Mount
Number of Drivers1
Product StatusActive
Rise / Fall Time (Typ)9.2ns, 7.9ns

Electrical

Current - Peak Output (Source, Sink)7.8A, 6.8A
Logic Voltage - VIL, VIH0.75V, 4.3V
Supply Voltage7V ~ 20V

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-40°C~125°C(TA)