MVSF2N02ELT1G

onsemi

MVSF2N02ELT1G

Datasheet

Analog & Power

MOSFET N-CH 20V 2.8A SOT23-3

DiscontinuedTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs85mOhm @ 3.6A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 5 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Max Power Dissipation1.25W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)