MVB50P03HDLT4G

onsemi

MVB50P03HDLT4G

Analog & Power

MOSFET P-CH 30V 50A D2PAK-3

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 25A, 5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs100 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4900 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Max Power Dissipation125W (Tc)

Mechanical

PackageBulk
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK

Environmental

Operating Temperature-55°C~150°C(TJ)