MTD6N20ET4

onsemi

MTD6N20ET4

Datasheet

Analog & Power

MOSFET N-CH 200V 6A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs700mOhm @ 3A, 10V
Base Product NumberMTD6N
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds480 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)

Mechanical

PackageCut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK