MMFT960T1G

onsemi

MMFT960T1G

Datasheet

Analog & Power

MOSFET N-CH 60V 300MA SOT223

ObsoleteTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.7Ohm @ 1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds65 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id3.5V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C300mA (Tc)
Max Power Dissipation800mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223 (TO-261)

Environmental

Operating Temperature-65°C ~ 150°C (TJ)