General
| Base Product Number | MJD112 |
|---|---|
| Manufacturer | onsemi |
| Mounting Type | Through Hole |
| Product Status | Active |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Power - Max | 1.75 W |
| Frequency - Transition | 25MHz |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Supplier Device Package | IPAK |
Environmental
| Operating Temperature | -65°C ~ 150°C (TJ) |
|---|