MCH6602-TL-E

onsemi

MCH6602-TL-E

Analog & Power

MOSFET 2N-CH 30V 0.35A 6MCPH

Obsolete6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.7Ohm @ 80mA, 4V
Base Product NumberMCH6602
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs1.58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds7pF @ 10V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C350mA
Power - Max800mW

Mechanical

PackageTape & Reel (TR)
Package / Case6-SMD, Flat Leads
Supplier Device Package6-MCPH

Environmental

Operating Temperature-55°C ~ 150°C (TJ)