MCH3420-TL-E

onsemi

MCH3420-TL-E

Analog & Power

MCH3420 - N-CHANNEL SILICON MOSF

Obsolete3-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.85mOhm @ 250mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds80 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Max Power Dissipation800mW (Ta)

Mechanical

PackageBulk
Package / Case3-SMD, Flat Leads
Supplier Device Package3-MCPH

Environmental

Operating Temperature150°C