MCH3376-TL-E

onsemi

MCH3376-TL-E

Datasheet

Analog & Power

MOSFET P-CH 20V 1.5A 3MCPH

ObsoleteSC-70, SOT-323Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs241mOhm @ 750mA, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1.4V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Max Power Dissipation800mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-70, SOT-323
Supplier Device Package3-MCPH

Environmental

Operating Temperature150°C(TJ)