IRLW630ATM

onsemi

IRLW630ATM

Analog & Power

MOSFET N-CH 200V 9A I2PAK

ObsoleteTO-262-3 Long Leads, I²Pak, TO-262AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds755 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Max Power Dissipation3.1W (Ta), 69W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK (TO-262)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)