IRL510A

onsemi

IRL510A

Analog & Power

MOSFET N-CH 100V 5.6A TO220-3

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs440mOhm @ 2.8A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds235 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Max Power Dissipation37W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C ~ 175°C (TJ)