Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 500mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 25 V |
| Manufacturer | onsemi |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Max Power Dissipation | 3.1W (Ta) |
| Package | Tape & Box (TB) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package | TO-92L |
| Operating Temperature | -55°C~150°C(TJ) |
|---|