HUF76009D3ST

onsemi

HUF76009D3ST

Analog & Power

MOSFET N-CH 20V 20A TO252AA

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs27mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds470 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesUltraFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation41W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C~150°C(TJ)