HUF75652G3

onsemi

HUF75652G3

Datasheet

Analog & Power

MOSFET N-CH 100V 75A TO247-3

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8mOhm @ 75A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds7585 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusActive
SeriesUltraFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Max Power Dissipation515W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C~175°C(TJ)