HUF75321D3

onsemi

HUF75321D3

Analog & Power

MOSFET N-CH 55V 20A IPAK

ObsoleteTO-251-3 Short Leads, IPAK, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs36mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
SeriesUltraFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage55 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation93W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device PackageIPAK

Environmental

Operating Temperature-55°C ~ 175°C (TJ)