HGTP5N120BND

onsemi

HGTP5N120BND

Datasheet

Analog & Power

IGBT 1200V 21A 167W TO220AB

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge53 nC
IGBT TypeNPT
Input TypeStandard
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
Reverse Recovery Time (trr)65 ns
Switching Energy450µJ (on), 390µJ (off)
Td (on/off) @ 25°C22ns/160ns
Test Condition960V, 5A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 5A

Electrical

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)21 A
Current - Collector Pulsed (Icm)40 A
Power - Max167 W

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)