HGTP10N120BN

onsemi

HGTP10N120BN

Datasheet

Analog & Power

IGBT 1200V 35A 298W TO220AB

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberHGTP10
Gate Charge100 nC
IGBT TypeNPT
Input TypeStandard
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
Switching Energy320µJ (on), 800µJ (off)
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A

Electrical

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)35 A
Current - Collector Pulsed (Icm)80 A
Power - Max298 W

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)