HGTD1N120BNS9A

onsemi

HGTD1N120BNS9A

Datasheet

Analog & Power

IGBT 1200V 5.3A 60W TO252AA

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberHGTD1N120
Gate Charge14 nC
IGBT TypeNPT
Input TypeStandard
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
Switching Energy70µJ (on), 90µJ (off)
Td (on/off) @ 25°C15ns/67ns
Test Condition960V, 1A, 82Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 1A

Electrical

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)5.3 A
Current - Collector Pulsed (Icm)6 A
Power - Max60 W

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C~150°C(TJ)