HGT1S10N120BNST

onsemi

HGT1S10N120BNST

Datasheet

Analog & Power

IGBT 1200V 35A 298W TO263AB

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberHGT1S10
Gate Charge100 nC
IGBT TypeNPT
Input TypeStandard
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
Switching Energy320µJ (on), 800µJ (off)
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A

Electrical

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)35 A
Current - Collector Pulsed (Icm)80 A
Power - Max298 W

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)

Environmental

Operating Temperature-55°C~150°C(TJ)