Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 20 V |
| Manufacturer | onsemi |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Max Power Dissipation | 1.9W (Ta) |
| Package | Bulk |
|---|---|
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Supplier Device Package | 8-SOP |
| Operating Temperature | 150°C (TJ) |
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