FSS273-TL-E

onsemi

FSS273-TL-E

Analog & Power

N-CHANNEL MOSFET

Active8-SOIC (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22mOhm @ 8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2225 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage45 V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Max Power Dissipation2.4W (Ta)

Mechanical

PackageBulk
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature150°C(TJ)