FQL50N40

onsemi

FQL50N40

Analog & Power

MOSFET N-CH 400V 50A TO264-3

ObsoleteTO-264-3, TO-264AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Max Power Dissipation460W (Tc)

Mechanical

PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)