FQD30N06TM

onsemi

FQD30N06TM

Datasheet

Analog & Power

MOSFET N-CH 60V 22.7A TO252

ActiveTO-252-3, DPAK (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 11.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds945 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C22.7A (Tc)
Max Power Dissipation2.5W (Ta), 44W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)