FQD20N06LETM

onsemi

FQD20N06LETM

Analog & Power

MOSFET N-CH 60V 17.2A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 8.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds665 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C17.2A (Tc)
Max Power Dissipation2.5W (Ta), 38W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)