FQB8N60CFTM

onsemi

FQB8N60CFTM

Analog & Power

MOSFET N-CH 600V 6.26A D2PAK

ObsoleteTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.5Ohm @ 3.13A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1255 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesFRFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C6.26A (Tc)
Max Power Dissipation147W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D2PAK)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)