FQB34N20LTM

onsemi

FQB34N20LTM

Datasheet

Analog & Power

MOSFET N-CH 200V 31A D2PAK

ActiveTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 15.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesQFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Max Power Dissipation3.13W (Ta), 180W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D2PAK)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)