FGA50N100BNTD2

onsemi

FGA50N100BNTD2

Datasheet

Analog & Power

IGBT 1000V 50A 156W TO3P

ObsoleteTO-3P-3, SC-65-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge257 nC
IGBT TypeNPT and Trench
Input TypeStandard
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
Reverse Recovery Time (trr)75 ns
Td (on/off) @ 25°C34ns/243ns
Test Condition600V, 60A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A

Electrical

Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)200 A
Power - Max156 W

Mechanical

PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

Environmental

Operating Temperature-55°C ~ 150°C (TJ)