FDZ663P

onsemi

FDZ663P

Analog & Power

MOSFET P-CH 20V 2.7A 4WLCSP

Obsolete4-XFBGA, WLCSPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs134mOhm @ 2A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds525 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.2V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case4-XFBGA, WLCSP
Supplier Device Package4-WLCSP (0.8x0.8)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)