FDZ209N

onsemi

FDZ209N

Analog & Power

MOSFET N-CH 60V 4A 12BGA

Obsolete12-WFBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 4A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds657 pF @ 30 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case12-WFBGA
Supplier Device Package12-BGA (2x2.5)

Environmental

Operating Temperature-55°C~150°C(TJ)