FDV302P

onsemi

FDV302P

Analog & Power

MOSFET P-CH 25V 120MA SOT23

ObsoleteTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10Ohm @ 200mA, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs0.31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds11 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-8V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage25 V
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C120mA (Ta)
Max Power Dissipation350mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

Environmental

Operating Temperature-55°C~150°C(TJ)