FDU8580

onsemi

FDU8580

Analog & Power

MOSFET N-CH 20V 35A I-PAK

ObsoleteTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 35A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1445 pF @ 10 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Max Power Dissipation49.5W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

Environmental

Operating Temperature-55°C ~ 175°C (TJ)