FDU3N50NZTU

onsemi

FDU3N50NZTU

Datasheet

Analog & Power

MOSFET N-CH 500V 2.5A DPAK3

ObsoleteTO-251-3 Short Leads, IPak, TO-251AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.5Ohm @ 1.25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Max Power Dissipation40W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageDPAK3 (IPAK)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)