FDT86256

onsemi

FDT86256

Datasheet

Analog & Power

MOSFET N-CH 150V 1.2A/3A SOT223

DiscontinuedTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs845mOhm @ 1.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds73 pF @ 75 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusLast Time Buy
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C1.2A (Ta), 3A (Tc)
Max Power Dissipation2.3W (Ta), 10W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-4

Environmental

Operating Temperature-55°C ~ 150°C (TJ)