FDT458P

onsemi

FDT458P

Datasheet

Analog & Power

MOSFET P-CH 30V 3.4A SOT223-4

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs130mOhm @ 3.4A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds205 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Max Power Dissipation3W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-4

Environmental

Operating Temperature-55°C ~ 150°C (TJ)