FDT457N

onsemi

FDT457N

Datasheet

Analog & Power

MOSFET N-CH 30V 5A SOT223-4

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds235 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Max Power Dissipation3W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-4

Environmental

Operating Temperature-65°C ~ 150°C (TJ)