FDT1600N10ALZ

onsemi

FDT1600N10ALZ

Datasheet

Analog & Power

MOSFET N-CH 100V 5.6A SOT223-4

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 2.8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds225 pF @ 50 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.8V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Max Power Dissipation10.42W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-4

Environmental

Operating Temperature-55°C ~ 150°C (TJ)