FDS8870

onsemi

FDS8870

Analog & Power

MOSFET N-CH 30V 18A 8SOIC

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.2mOhm @ 18A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4615 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Max Power Dissipation2.5W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C~150°C(TJ)