FDS6064N7

onsemi

FDS6064N7

Analog & Power

MOSFET N-CH 20V 23A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.5mOhm @ 23A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds7191 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C23A (Ta)
Max Power Dissipation3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C~150°C(TJ)