FDS5170N7

onsemi

FDS5170N7

Analog & Power

MOSFET N-CH 60V 10.6A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width) Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 10.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2889 pF @ 30 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C10.6A (Ta)
Max Power Dissipation3W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package8-SO FLMP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)