FDS4470

onsemi

FDS4470

Analog & Power

POWER FIELD-EFFECT TRANSISTOR, 1

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 12.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2659 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+30V, -20V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12.5A (Ta)
Max Power Dissipation2.5W (Ta)

Mechanical

PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C~175°C(TJ)