FDS3812

onsemi

FDS3812

Analog & Power

MOSFET 2N-CH 80V 3.4A 8SOIC

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs74mOhm @ 3.4A, 10V
Base Product NumberFDS38
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds634pF @ 40V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage80V
Current - Continuous Drain (Id) @ 25°C3.4A
Power - Max900mW

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 175°C (TJ)