FDR858P

onsemi

FDR858P

Analog & Power

MOSFET P-CH 30V 8A SUPERSOT8

Obsolete8-LSOP (0.130", 3.30mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs19mOhm @ 8A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2010 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Max Power Dissipation1.8W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-LSOP (0.130", 3.30mm Width)
Supplier Device PackageSuperSOT™-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)