FDR8508P

onsemi

FDR8508P

Analog & Power

MOSFET 2P-CH 30V 3A SUPERSOT 8

Obsolete8-LSOP (0.130", 3.30mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs52mOhm @ 3A, 10V
Base Product NumberFDR85
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 15V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C3A
Power - Max800mW

Mechanical

PackageTape & Reel (TR)
Package / Case8-LSOP (0.130", 3.30mm Width)
Supplier Device PackageSuperSOT™-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)