FDR840P

onsemi

FDR840P

Analog & Power

MOSFET P-CH 20V 10A SUPERSOT8

Obsolete8-LSOP (0.130", 3.30mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 10A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4481 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Max Power Dissipation1.8W (Ta)

Mechanical

Package / Case8-LSOP (0.130", 3.30mm Width)
Supplier Device PackageSuperSOT™-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)