FDPF3860T

onsemi

FDPF3860T

Analog & Power

MOSFET N-CH 100V 20A TO220F

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs38.2mOhm @ 5.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusActive
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation33.8W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)