FDP8870

onsemi

FDP8870

Analog & Power

MOSFET N-CH 30V 156A TO-220AB

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.1mOhm @ 35A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 15 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 156A (Tc)
Max Power Dissipation160W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C ~ 175°C (TJ)