FDP5645

onsemi

FDP5645

Analog & Power

MOSFET N-CH 60V 80A TO220-3

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9.5mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4468 pF @ 30 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C80A (Ta)
Max Power Dissipation125W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-65°C ~ 175°C (TJ)