FDP3632

onsemi

FDP3632

Datasheet

Analog & Power

MOSFET N-CH 100V 12A/80A TO220-3

DiscontinuedTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 80A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 80A (Tc)
Max Power Dissipation310W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C~175°C(TJ)